Biexcitons in GaN and AlGaN epitaxial layersYAMADA, Yoichi.Proceedings - Electrochemical Society. 2004, pp 326-340, issn 0161-6374, isbn 1-56677-419-5, 15 p.Conference Paper

Enhanchement of ionization efficiency of acceptors by their excited states in heavily doped P-type GaN and wide bandgap semiconductorsMATSUURA, Hideharu.Proceedings - Electrochemical Society. 2004, pp 570-581, issn 0161-6374, isbn 1-56677-419-5, 12 p.Conference Paper

Direction of excited carriers from low in facets of InGaN microcrystals observed in the highly spatially resolved cathodoluminescent imagesKANIE, H; KOBAYASHI, S.Proceedings - Electrochemical Society. 2004, pp 529-534, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

III-V ternary bulk crystal growth technologyDUTTA, P. S.Proceedings - Electrochemical Society. 2004, pp 134-141, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Photoelectrochemical investigation of the etching of GaN in H₃PO₄HEFFERNAN, C; BUCKLEY, D. N; O'RAIFEARTAIGH, C et al.Proceedings - Electrochemical Society. 2004, pp 552-563, issn 0161-6374, isbn 1-56677-419-5, 12 p.Conference Paper

Effects of nano-sized interface on the electrical resistances of the P-GaAs wafer bondingHAO OUYANG; CHENG, Ji-Hao; YEWCHUNG SERMON WU et al.Proceedings - Electrochemical Society. 2004, pp 60-64, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper

Au/In₂ bonding of InP-based MOEMSSTRASSNER, M; DION, J; SAGNES, I et al.Proceedings - Electrochemical Society. 2004, pp 172-176, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper

Preparation of cubic silicon carbide with smooth surface on carbonized porous siliconKOMIYAMA, J; ABE, Y; SUZUKI, S et al.Proceedings - Electrochemical Society. 2004, pp 142-149, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Spectrometric monitoring method for concentration of hydrogen peroxide in chemical etching solution of gallium arsenideSHIGYO, Kazuhiro; UMEMURA, Sonoko; KINUGAWA, Masaru et al.Proceedings - Electrochemical Society. 2004, pp 51-59, issn 0161-6374, isbn 1-56677-419-5, 9 p.Conference Paper

Studies of electron trapping in III-nitridesCHERNYAK, Leonid; BURDETT, William; LOPATIUK, Olena et al.Proceedings - Electrochemical Society. 2004, pp 512-521, issn 0161-6374, isbn 1-56677-419-5, 10 p.Conference Paper

High voltage AlGaN/GaN power HEMT for power electronics applicationsOMURA, Ichiro; SAITO, Wataru; TSUDA, Kunio et al.Proceedings - Electrochemical Society. 2004, pp 386-394, issn 0161-6374, isbn 1-56677-419-5, 9 p.Conference Paper

Molecular beam epitaxy of GaN on lattice-matched zirconium diboride substrates using low-temperature GaN and ALN nucleation layersARMITAGE, Rob; SUDA, Jun; KIMOTO, Tsunenobu et al.Proceedings - Electrochemical Society. 2004, pp 484-495, issn 0161-6374, isbn 1-56677-419-5, 12 p.Conference Paper

Fabrication of indium-doped N-Fe₂O₃ thin films by spray pyrolytic deposition method for photoelectrochemical water splittingINGLER, William B; KHAN, Shahed U. M.Proceedings - Electrochemical Society. 2004, pp 124-133, issn 0161-6374, isbn 1-56677-419-5, 10 p.Conference Paper

Self-assembled indium nitride nanocolumns grown by molecular beam epitaxyNG, H. M; LIU, R; PONCE, F. A et al.Proceedings - Electrochemical Society. 2004, pp 372-379, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Unique capabilities of chemically-assisted ion-beam etching for compound semiconductor devicesVAWTER, G. Allen; ALFORD, Charles.Proceedings - Electrochemical Society. 2004, pp 35-43, issn 0161-6374, isbn 1-56677-419-5, 9 p.Conference Paper

Characterization of GaN Schottky barrier photodiodes with a low-temperature GaN cap layerLEE, M. L; SHEU, J. K; SU, Y. K et al.Proceedings - Electrochemical Society. 2004, pp 260-269, issn 0161-6374, isbn 1-56677-419-5, 10 p.Conference Paper

Characterization of InGaAs self-mixing detectors for chirp, amplitude-modulated LADAR (CAML)GERHOLD, Mike; ALIBERTI, Keith; HONGEN SHEN et al.Proceedings - Electrochemical Society. 2004, pp 12-23, issn 0161-6374, isbn 1-56677-419-5, 12 p.Conference Paper

An innovative planarization technology for ultra high frequency InP/InGaAs heterojunction bipolar transistor (HBT) manufacturingZENG, X; CHANG, P. C; YAMAMOTO, J et al.Proceedings - Electrochemical Society. 2004, pp 44-50, issn 0161-6374, isbn 1-56677-419-5, 7 p.Conference Paper

Pulse testing of GaN/AlGaN HEMTsBACA, A. G; KIM, Y. M; MARSH, P. F et al.Proceedings - Electrochemical Society. 2004, pp 435-440, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Sensors based on SiC-AIN MEMSDOPPALAPUDI, Dharanipal; MLCAK, Richard; CHAN, Jeffrey et al.Proceedings - Electrochemical Society. 2004, pp 287-299, issn 0161-6374, isbn 1-56677-419-5, 13 p.Conference Paper

Numerical simulation of the anodic formation of nanoporous indium phosphideLYNCH, R; O'DWYER, C; CLANCY, I et al.Proceedings - Electrochemical Society. 2004, pp 85-95, issn 0161-6374, isbn 1-56677-419-5, 11 p.Conference Paper

Self oriented growth of GaN films on molten galliumHONGWEI LI; CHANDRASEKARAN, Hari; SUNKARA, Mahendra K et al.Proceedings - Electrochemical Society. 2004, pp 496-503, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Single crystal growth of gallium nitride by slow-cooling of its congruent melt under high pressureSAITOH, Hiroyuki; UTSUMI, Wataru; KANEKO, Hiroshi et al.Proceedings - Electrochemical Society. 2004, pp 587-592, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Formation of nanoporous INP by electrochemical anodizationBUCKLEY, D. N; O'DWYER, C; LYNCH, R et al.Proceedings - Electrochemical Society. 2004, pp 103-117, issn 0161-6374, isbn 1-56677-419-5, 15 p.Conference Paper

Efeects of MESA etching processes on GaInP/GaAs triple barrier resonant tunneling diodesSUHARA, M; ASAOKA, N; FUKUMITSU, M et al.Proceedings - Electrochemical Society. 2004, pp 96-102, issn 0161-6374, isbn 1-56677-419-5, 7 p.Conference Paper